Band gap effects of hexagonal boron nitride using oxygen plasma

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Opti...

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Main Authors: Singh, Ram Sevak, Tay, Roland Yingjie, Chow, Wai Leong, Tsang, Siu Hon, Mallick, Govind, Teo, Edwin Hang Tong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/97555
http://hdl.handle.net/10220/19603
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-975552020-09-26T22:18:59Z Band gap effects of hexagonal boron nitride using oxygen plasma Singh, Ram Sevak Tay, Roland Yingjie Chow, Wai Leong Tsang, Siu Hon Mallick, Govind Teo, Edwin Hang Tong School of Electrical and Electronic Engineering School of Materials Science & Engineering Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing. Published version 2014-06-10T03:03:52Z 2019-12-06T19:44:01Z 2014-06-10T03:03:52Z 2019-12-06T19:44:01Z 2014 2014 Journal Article Singh, R. S., Tay, R. Y., Chow, W. L., Tsang, S. H., Mallick, G., & Teo, E. H. T. (2014). Band gap effects of hexagonal boron nitride using oxygen plasma. Applied Physics Letters, 104(16), 163101-. https://hdl.handle.net/10356/97555 http://hdl.handle.net/10220/19603 10.1063/1.4872318 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4872318].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Singh, Ram Sevak
Tay, Roland Yingjie
Chow, Wai Leong
Tsang, Siu Hon
Mallick, Govind
Teo, Edwin Hang Tong
Band gap effects of hexagonal boron nitride using oxygen plasma
description Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Singh, Ram Sevak
Tay, Roland Yingjie
Chow, Wai Leong
Tsang, Siu Hon
Mallick, Govind
Teo, Edwin Hang Tong
format Article
author Singh, Ram Sevak
Tay, Roland Yingjie
Chow, Wai Leong
Tsang, Siu Hon
Mallick, Govind
Teo, Edwin Hang Tong
author_sort Singh, Ram Sevak
title Band gap effects of hexagonal boron nitride using oxygen plasma
title_short Band gap effects of hexagonal boron nitride using oxygen plasma
title_full Band gap effects of hexagonal boron nitride using oxygen plasma
title_fullStr Band gap effects of hexagonal boron nitride using oxygen plasma
title_full_unstemmed Band gap effects of hexagonal boron nitride using oxygen plasma
title_sort band gap effects of hexagonal boron nitride using oxygen plasma
publishDate 2014
url https://hdl.handle.net/10356/97555
http://hdl.handle.net/10220/19603
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