Band gap effects of hexagonal boron nitride using oxygen plasma

• المؤلفون الرئيسيون: Singh, Ram Sevak, Tay, Roland Yingjie, Chow, Wai Leong, Tsang, Siu Hon, Mallick, Govind, Teo, Edwin Hang Tong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97555; http://hdl.handle.net/10220/19603

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Opti...