Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature

• Main Authors: Chen, S., Xu, H., Goh, K. E. J., Liu, Lerwen., Randall, J. N.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/97559; http://hdl.handle.net/10220/10644
• Institution: Nanyang Technological University

We have patterned sub-1 nm dangling-bond (DB) lines on a H-terminated Si(100)-2 × 1 surface aligned with atomic precision at room temperature using a scanning tunneling microscope (STM) to controllably desorb hydrogen atoms from a H:Si(100) surface. In order to achieve continuous and aligned DB line...