Ultra low-power filter bank for hearing aid speech processor

Ultra low-power filter bank for hearing aid speech processor

An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime a...

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Main Authors: Chong, Kwen-Siong, Barangi, Mahmood, Kim, Jaeyoung, Chang, Joseph Sylvester, Mazumder, Pinaki
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/97754
http://hdl.handle.net/10220/12123
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-97754
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spelling sg-ntu-dr.10356-977542020-03-07T13:24:48Z Ultra low-power filter bank for hearing aid speech processor Chong, Kwen-Siong Barangi, Mahmood Kim, Jaeyoung Chang, Joseph Sylvester Mazumder, Pinaki School of Electrical and Electronic Engineering IEEE Subthreshold Microelectronics Conference (2012 : Waltham, US) DRNTU::Engineering::Electrical and electronic engineering An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation. 2013-07-24T08:25:26Z 2019-12-06T19:46:08Z 2013-07-24T08:25:26Z 2019-12-06T19:46:08Z 2012 2012 Conference Paper Chong, K.-S., Barangi, M., Kim, J., Chang, J. S., & Mazumder, P. (2012). Ultra low-power filter bank for hearing aid speech processor. 2012 IEEE Subthreshold Microelectronics Conference (SubVT), 1-3. https://hdl.handle.net/10356/97754 http://hdl.handle.net/10220/12123 10.1109/SubVT.2012.6404314 en © 2012 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Chong, Kwen-Siong
Barangi, Mahmood
Kim, Jaeyoung
Chang, Joseph Sylvester
Mazumder, Pinaki
Ultra low-power filter bank for hearing aid speech processor
description An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Chong, Kwen-Siong
Barangi, Mahmood
Kim, Jaeyoung
Chang, Joseph Sylvester
Mazumder, Pinaki
format Conference or Workshop Item
author Chong, Kwen-Siong
Barangi, Mahmood
Kim, Jaeyoung
Chang, Joseph Sylvester
Mazumder, Pinaki
author_sort Chong, Kwen-Siong
title Ultra low-power filter bank for hearing aid speech processor
title_short Ultra low-power filter bank for hearing aid speech processor
title_full Ultra low-power filter bank for hearing aid speech processor
title_fullStr Ultra low-power filter bank for hearing aid speech processor
title_full_unstemmed Ultra low-power filter bank for hearing aid speech processor
title_sort ultra low-power filter bank for hearing aid speech processor
publishDate 2013
url https://hdl.handle.net/10356/97754
http://hdl.handle.net/10220/12123
_version_ 1681046715445018624

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