Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device

• Main Authors: Vaddi, Ramesh, Pott, Vincent, Chua, Geng Li, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/97897; http://hdl.handle.net/10220/11330

This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates...