Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device

• المؤلفون الرئيسيون: Vaddi, Ramesh, Pott, Vincent, Chua, Geng Li, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97897; http://hdl.handle.net/10220/11330

This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates...