800 nW 43 nV/[radical]Hz neural recording amplifier with enhanced noise efficiency factor

• Main Authors: Liu, L., Zou, X., Goh, Wang Ling, Rajkumar, Ramamoorthy, Dawe, Gavin, Je, Minkyu
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98085; http://hdl.handle.net/10220/13265
• Institution: Nanyang Technological University

Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/ p Hz and the input-referred noise is 5.71 mVrms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 mm CMOS technology, occupying an area of 0.05 mm2.