Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

• Main Authors: Kyaw, Zabu, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Hasanov, Namig, Zhu, Binbin, Lu, Shunpeng, Zhang, Yiping, Teng, Jing Hua, Wei, Sun Xiao, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• Online Access: https://hdl.handle.net/10356/98745; http://hdl.handle.net/10220/19608
• Institution: Nanyang Technological University

A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentally and theoretically. In the proposed structure, th...