Realization of transient memory-loss with NiO-based resistive switching device

• Main Authors: Hu, S. G., Liu, Y., Liu, Z., Yu, Q., Deng, L. J., Yin, Y., Chen, Tupei, Hosaka, Sumio
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/99029; http://hdl.handle.net/10220/12539
• Institution: Nanyang Technological University

A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is...