Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell
Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/WO3/Ag was employed. For comparison, an identical device using a so...
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sg-ntu-dr.10356-990452021-01-20T04:25:09Z Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell Oo, Than Zaw Chandra, R. Devi Yantara, Natalia Prabhakar, Rajiv Ramanujam Wong, Lydia Helena Mathews, Nripan Mhaisalkar, Subodh Gautam School of Materials Science and Engineering Energy Research Institute @ NTU (ERI@N) Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/WO3/Ag was employed. For comparison, an identical device using a sol–gel derived TiOx electron extracting layer was also fabricated. Increased short-circuit density (Jsc) and open-circuit voltage (Voc) were generated in the devices with ZTO layer in comparison to the ones with TiOx layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices. 2013-11-05T04:13:05Z 2019-12-06T20:02:39Z 2013-11-05T04:13:05Z 2019-12-06T20:02:39Z 2012 2012 Journal Article Oo, T. Z., Chandra, R. D., Yantara, N., Prabhakar, R. R., Wong, L. H., Mathews, N., et al. (2012). Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell. Organic Electronics, 13(5), 870-874. 1566-1199 https://hdl.handle.net/10356/99045 http://hdl.handle.net/10220/17238 10.1016/j.orgel.2012.01.011 en Organic electronics |
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Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/WO3/Ag was employed. For comparison, an identical device using a sol–gel derived TiOx electron extracting layer was also fabricated. Increased short-circuit density (Jsc) and open-circuit voltage (Voc) were generated in the devices with ZTO layer in comparison to the ones with TiOx layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices. |
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School of Materials Science and Engineering |
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School of Materials Science and Engineering Oo, Than Zaw Chandra, R. Devi Yantara, Natalia Prabhakar, Rajiv Ramanujam Wong, Lydia Helena Mathews, Nripan Mhaisalkar, Subodh Gautam |
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Oo, Than Zaw Chandra, R. Devi Yantara, Natalia Prabhakar, Rajiv Ramanujam Wong, Lydia Helena Mathews, Nripan Mhaisalkar, Subodh Gautam |
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Oo, Than Zaw Chandra, R. Devi Yantara, Natalia Prabhakar, Rajiv Ramanujam Wong, Lydia Helena Mathews, Nripan Mhaisalkar, Subodh Gautam Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell |
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Oo, Than Zaw |
title |
Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell |
title_short |
Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell |
title_full |
Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell |
title_fullStr |
Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell |
title_full_unstemmed |
Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell |
title_sort |
zinc tin oxide (zto) electron transporting buffer layer in inverted organic solar cell |
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2013 |
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https://hdl.handle.net/10356/99045 http://hdl.handle.net/10220/17238 |
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