Growth of tapered SiC nanowires on flexible carbon fabric : toward field emission applications

Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric by a chemical vapor deposition process. The products were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscop...

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Bibliographic Details
Main Authors: Wu, Renbing, Zhou, Kun, Huang, Yizhong, Wei, Jun, Su, Fei, Chen, Jianjun, Wang, Liuying
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99111
http://hdl.handle.net/10220/17328
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Institution: Nanyang Technological University
Language: English
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