Growth of tapered SiC nanowires on flexible carbon fabric : toward field emission applications
Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric by a chemical vapor deposition process. The products were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscop...
Saved in:
Main Authors: | , , , , , , |
---|---|
其他作者: | |
格式: | Article |
語言: | English |
出版: |
2013
|
在線閱讀: | https://hdl.handle.net/10356/99111 http://hdl.handle.net/10220/17328 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |
成為第一個發表評論!