Growth of tapered SiC nanowires on flexible carbon fabric : toward field emission applications

Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric by a chemical vapor deposition process. The products were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscop...

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Main Authors: Wu, Renbing, Zhou, Kun, Huang, Yizhong, Wei, Jun, Su, Fei, Chen, Jianjun, Wang, Liuying
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2013
在線閱讀:https://hdl.handle.net/10356/99111
http://hdl.handle.net/10220/17328
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機構: Nanyang Technological University
語言: English