Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices

• Main Authors: Gong, Cheng, Yang, Hongbin, Song, Qun Liang, Li, Chang Ming
• Other Authors: School of Chemical and Biomedical Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Chemical engineering
• Online Access: https://hdl.handle.net/10356/99234; http://hdl.handle.net/10220/17175
• Institution: Nanyang Technological University

Nanostructure of solar cell materials is often essential for the device performance. V2O5 nanobelt structure is synthesized with a solution process and further used as an anode buffer layer in polymer solar cells, resulting insignificantly improved power conversion efficiency (PCE of 2.71%) much higher than that of devices without the buffer layer (PCE of 0.14%) or with V2O5 powder as the buffer layer (1.08%). X-ray diffraction (XRD) results indicate that the V2O5 nanobelt structure has better phase separation while providing higher surface area for the P3HT:PCBM active layer to enhance photocurrent. The measured impedance spectrums show that the V2O5 nanobelt structure has faster charge transport than the powder material. This work clearly demonstrates that V2O5 nanobelt has great potential as a substitute of the conventionally used PEDOT-PSS buffer layer for high performance devices.