Memory effects in the charge response of lightly doped La2−x Sr x CuO4
The in-plane magnetoresistance (MR) of a single crystal La1.97Sr0.03CuO4 has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memor...
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sg-ntu-dr.10356-992552020-03-07T12:37:05Z Memory effects in the charge response of lightly doped La2−x Sr x CuO4 Popović, Dragana Panagopoulos, Christos Raičević, I. Sasagawa, T. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Electricity and magnetism The in-plane magnetoresistance (MR) of a single crystal La1.97Sr0.03CuO4 has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory, and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes. 2013-10-31T08:11:46Z 2019-12-06T20:05:07Z 2013-10-31T08:11:46Z 2019-12-06T20:05:07Z 2012 2012 Journal Article Raičević, I., Popović, D., Panagopoulos, C., & Sasagawa, T. (2012). Memory effects in the charge response of lightly doped La2−x Sr x CuO4. Journal of superconductivity and novel magnetism, 25(5), 1239-1242. https://hdl.handle.net/10356/99255 http://hdl.handle.net/10220/17165 10.1007/s10948-012-1542-0 en Journal of superconductivity and novel magnetism |
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DRNTU::Science::Physics::Electricity and magnetism Popović, Dragana Panagopoulos, Christos Raičević, I. Sasagawa, T. Memory effects in the charge response of lightly doped La2−x Sr x CuO4 |
| description |
The in-plane magnetoresistance (MR) of a single crystal La1.97Sr0.03CuO4 has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory, and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes. |
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School of Physical and Mathematical Sciences |
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School of Physical and Mathematical Sciences Popović, Dragana Panagopoulos, Christos Raičević, I. Sasagawa, T. |
| format |
Article |
| author |
Popović, Dragana Panagopoulos, Christos Raičević, I. Sasagawa, T. |
| author_sort |
Popović, Dragana |
| title |
Memory effects in the charge response of lightly doped La2−x Sr x CuO4 |
| title_short |
Memory effects in the charge response of lightly doped La2−x Sr x CuO4 |
| title_full |
Memory effects in the charge response of lightly doped La2−x Sr x CuO4 |
| title_fullStr |
Memory effects in the charge response of lightly doped La2−x Sr x CuO4 |
| title_full_unstemmed |
Memory effects in the charge response of lightly doped La2−x Sr x CuO4 |
| title_sort |
memory effects in the charge response of lightly doped la2−x sr x cuo4 |
| publishDate |
2013 |
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https://hdl.handle.net/10356/99255 http://hdl.handle.net/10220/17165 |
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1681042981072666624 |