Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor

• Main Authors: Krishna, S. V. Hari, An, Jianing, Zheng, Lianxi
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/99284; http://hdl.handle.net/10220/24047
• Institution: Nanyang Technological University

Ethanol based chemical vapour deposition (CVD) was used to grow clean individual ultralong single walled carbon nanotubes (SWCNTs) and fabricated as carbon nanotube field-effect transistors (CNTFETs). Here, the two kinds of mobility-effective physical mobility and conventional field-effect mobility...