Diode-pumped femtosecond passively mode-locked Yb:LPS laser

A diode-pumped passively mode-locked Yb:Lu2Si2O7 (Yb:LPS) laser is demonstrated for the first time, to our knowledge. Using a commercial semiconductor saturable absorber mirror (SESAM) as the mode locker and a pair of Gires-Tournois interferometer (GTI) mirrors for group-velocity dispersion (GVD) co...

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Main Authors: Xu, J., Zhang, J., Tan, W. W., Li, D. Z., Su, B. L., Xu, C. W., Xu, X. D., Zheng, L. H., Tang, Dingyuan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99304
http://hdl.handle.net/10220/13727
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-993042020-03-07T14:02:37Z Diode-pumped femtosecond passively mode-locked Yb:LPS laser Xu, J. Zhang, J. Tan, W. W. Li, D. Z. Su, B. L. Xu, C. W. Xu, X. D. Zheng, L. H. Tang, Dingyuan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A diode-pumped passively mode-locked Yb:Lu2Si2O7 (Yb:LPS) laser is demonstrated for the first time, to our knowledge. Using a commercial semiconductor saturable absorber mirror (SESAM) as the mode locker and a pair of Gires-Tournois interferometer (GTI) mirrors for group-velocity dispersion (GVD) compensating, we have obtained stable femtosecond mode locked pulses. Two output couplers of transmission of 1.6% and 5% were used to exploit the mode locked laser performance. For the output coupler with T = 1.6%, 195 fs pulses centered at 1042 nm were generated, and for the output coupler with T = 5.0%, 450 fs pulses centered at 1058 nm were generated. The corresponding output power is 130 and 610 mW, respectively. Higher output could be obtained but the laser operated at multi pulse regime. In addition, a preliminary continuous wave (CW) laser performance test demonstrated a slope efficiency of up to 70% with respect to incident pump power, which is much higher than the previous value of 35% with respect to absorbed pump power. 2013-09-30T04:36:34Z 2019-12-06T20:05:34Z 2013-09-30T04:36:34Z 2019-12-06T20:05:34Z 2012 2012 Journal Article Xu, C. W., Tang, D., Xu, X. D., Zheng, L. H., Zhang, J., Tan, W. W., Li, D. Z., Su, B. L., & Xu, J. (2012). Diode-pumped femtosecond passively mode-locked Yb:LPS laser. Laser physics letters, 9(10). https://hdl.handle.net/10356/99304 http://hdl.handle.net/10220/13727 10.7452/lapl.201210080 en Laser physics letters
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Xu, J.
Zhang, J.
Tan, W. W.
Li, D. Z.
Su, B. L.
Xu, C. W.
Xu, X. D.
Zheng, L. H.
Tang, Dingyuan
Diode-pumped femtosecond passively mode-locked Yb:LPS laser
description A diode-pumped passively mode-locked Yb:Lu2Si2O7 (Yb:LPS) laser is demonstrated for the first time, to our knowledge. Using a commercial semiconductor saturable absorber mirror (SESAM) as the mode locker and a pair of Gires-Tournois interferometer (GTI) mirrors for group-velocity dispersion (GVD) compensating, we have obtained stable femtosecond mode locked pulses. Two output couplers of transmission of 1.6% and 5% were used to exploit the mode locked laser performance. For the output coupler with T = 1.6%, 195 fs pulses centered at 1042 nm were generated, and for the output coupler with T = 5.0%, 450 fs pulses centered at 1058 nm were generated. The corresponding output power is 130 and 610 mW, respectively. Higher output could be obtained but the laser operated at multi pulse regime. In addition, a preliminary continuous wave (CW) laser performance test demonstrated a slope efficiency of up to 70% with respect to incident pump power, which is much higher than the previous value of 35% with respect to absorbed pump power.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Xu, J.
Zhang, J.
Tan, W. W.
Li, D. Z.
Su, B. L.
Xu, C. W.
Xu, X. D.
Zheng, L. H.
Tang, Dingyuan
format Article
author Xu, J.
Zhang, J.
Tan, W. W.
Li, D. Z.
Su, B. L.
Xu, C. W.
Xu, X. D.
Zheng, L. H.
Tang, Dingyuan
author_sort Xu, J.
title Diode-pumped femtosecond passively mode-locked Yb:LPS laser
title_short Diode-pumped femtosecond passively mode-locked Yb:LPS laser
title_full Diode-pumped femtosecond passively mode-locked Yb:LPS laser
title_fullStr Diode-pumped femtosecond passively mode-locked Yb:LPS laser
title_full_unstemmed Diode-pumped femtosecond passively mode-locked Yb:LPS laser
title_sort diode-pumped femtosecond passively mode-locked yb:lps laser
publishDate 2013
url https://hdl.handle.net/10356/99304
http://hdl.handle.net/10220/13727
_version_ 1681035260978003968