Bi(Zn2/3Nb1/3)O3-(K0.5Na0.5)NbO3 high-temperature lead-freeferroelectric ceramics with low capacitance variation in a broad temperature usage range

• Main Authors: Cheng, Hualei, Zhou, Wancheng, Zhu, Dongmei, Luo, Fa, Xu, Boxi, Du, Hongliang.
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials::Ceramic materials
• Online Access: https://hdl.handle.net/10356/99388; http://hdl.handle.net/10220/17830
• Institution: Nanyang Technological University

The xBi(Zn2/3Nb1/3)O3–(1−x)(K0.5Na0.5)NbO3 (abbreviated as xBZN–(1−x)KNN) ceramics have been synthesized using the conventional solid-state sintering method. The phase structure, dielectric properties and “relaxorlike” behavior of the ceramics were investigated. The 0.03BZN–0.97KNN ceramics show a broad and stable permittivity maximum near 2000 and lower dielectric loss (≤5%) at a broad temperature usage range (100°C–400°C) and the capacitance variation (ΔC/C150°C) is maintained smaller than ±15%. The 0.03BZN–0.97KNN ceramics only possess the diffuse phase transition and no frequency dispersion of dielectric permittivity, which indicates that 0.03BZN–0.97KNN ceramics is a high temperature “relaxorlike” ferroelectric ceramics. These results indicate that 0.03BZN–0.97KNN ceramics are excellent promising candidates for preparing high-temperature multilayer ceramics capacitors.