Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate

Reduced Graphene Oxide (rGO) has the distinct advantage of an aqueous and industrial-scalable production route. However large deviation in the electrical resistivity of fabricated rGO devices, caused by inhomogeneous coverage of rGO on the substrate, prevents its practical application in electronic...

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Main Authors: Nimmo, Myra A., Huang, Jingfeng, Fam, Derrick Wen Hui, He, Qiyuan, Chen, Hu, Zhan, Da, Faulkner, Steve, Tok, Alfred Iing Yoong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99405
http://hdl.handle.net/10220/17590
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-994052023-07-14T15:54:05Z Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate Nimmo, Myra A. Huang, Jingfeng Fam, Derrick Wen Hui He, Qiyuan Chen, Hu Zhan, Da Faulkner, Steve Tok, Alfred Iing Yoong School of Materials Science & Engineering Institute for Sports Research DRNTU::Engineering::Materials Reduced Graphene Oxide (rGO) has the distinct advantage of an aqueous and industrial-scalable production route. However large deviation in the electrical resistivity of fabricated rGO devices, caused by inhomogeneous coverage of rGO on the substrate, prevents its practical application in electronic devices. This critical problem could be solved by using an ethanol chemical vapour deposition (CVD) treatment on the graphene oxide (GO). With the treatment, not only GO was reduced to rGO, rGO new growths preferentially grow outwards from the edges of the existing GO template and enlarge in size until rGO completely covered the substrate. The growth sequence was presented and our results indicate that the growth support the free radical condensate growth mechanism. After the ethanol CVD treatment, the standard deviation in electrical resistivity decreased significantly by 99.95% (1.60E+06 to 7.72E+02 Ω/square) in comparison to hydrazine-reduced rGO substrates. As no carbon signatures on the substrate were observed if no template was used; this work indicate that GO could act as template for subsequent formation of rGO. EDB (Economic Devt. Board, S’pore) Accepted version 2013-11-12T00:49:42Z 2019-12-06T20:06:51Z 2013-11-12T00:49:42Z 2019-12-06T20:06:51Z 2013 2013 Journal Article Huang, J., Fam, D. W. H., He, Q., Chen, H., Zhan, D., Faulkner, S., Nimmo, M. A., & Tok, A. I. Y. (2013). Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate. Journal of Materials Chemistry C, 2(1), 109-114. https://hdl.handle.net/10356/99405 http://hdl.handle.net/10220/17590 10.1039/c3tc31529k en Journal of materials chemistry C © 2013 Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Materials Chemistry C, Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1039/c3tc31529k]. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Nimmo, Myra A.
Huang, Jingfeng
Fam, Derrick Wen Hui
He, Qiyuan
Chen, Hu
Zhan, Da
Faulkner, Steve
Tok, Alfred Iing Yoong
Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate
description Reduced Graphene Oxide (rGO) has the distinct advantage of an aqueous and industrial-scalable production route. However large deviation in the electrical resistivity of fabricated rGO devices, caused by inhomogeneous coverage of rGO on the substrate, prevents its practical application in electronic devices. This critical problem could be solved by using an ethanol chemical vapour deposition (CVD) treatment on the graphene oxide (GO). With the treatment, not only GO was reduced to rGO, rGO new growths preferentially grow outwards from the edges of the existing GO template and enlarge in size until rGO completely covered the substrate. The growth sequence was presented and our results indicate that the growth support the free radical condensate growth mechanism. After the ethanol CVD treatment, the standard deviation in electrical resistivity decreased significantly by 99.95% (1.60E+06 to 7.72E+02 Ω/square) in comparison to hydrazine-reduced rGO substrates. As no carbon signatures on the substrate were observed if no template was used; this work indicate that GO could act as template for subsequent formation of rGO.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Nimmo, Myra A.
Huang, Jingfeng
Fam, Derrick Wen Hui
He, Qiyuan
Chen, Hu
Zhan, Da
Faulkner, Steve
Tok, Alfred Iing Yoong
format Article
author Nimmo, Myra A.
Huang, Jingfeng
Fam, Derrick Wen Hui
He, Qiyuan
Chen, Hu
Zhan, Da
Faulkner, Steve
Tok, Alfred Iing Yoong
author_sort Nimmo, Myra A.
title Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate
title_short Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate
title_full Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate
title_fullStr Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate
title_full_unstemmed Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate
title_sort mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on sio2 substrate
publishDate 2013
url https://hdl.handle.net/10356/99405
http://hdl.handle.net/10220/17590
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