Design, modeling and simulation of an anchorless nano-electro- mechanical nonvolatile memory

• المؤلفون الرئيسيون: Vaddi, Ramesh, Pott, Vincent, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectromechanical systems
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99444; http://hdl.handle.net/10220/18366; http://www.ipcsit.com/proceeding.htm
• المؤسسة: Nanyang Technological University

Non Volatile Memories (NVMs) based on a storage layer, like FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation and modeling details of a new NVM based on nano-electromechanical memory (NEM) cell having...