The effect of secondary electrons on emission

• Main Authors: Li, Yuan, Zhao, Suling, Xu, Zheng, Zhang, Fujun, Zhao, Dewei, Song, Jinglu, Huang, Jinzhao, Yan, Guang, Kong, Chao, Xu, Xurong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/99778; http://hdl.handle.net/10220/17547
• Institution: Nanyang Technological University

The effect of secondary electrons on emission is studied by modelling the electrons behaviours in multi-layers, including electron injection, transportation, multiplication, and emission. The dielectric constant model and carrier mobility model are presented to describe the voltage distribution in multi-layers for the non-current injection and current injection respectively. After injection, the electrons are accelerated in SiO2, where they collide with the electrons, generating secondary electrons, consequently contributing to emission. A multiplying factor M is introduced to describe the secondary electrons multiplication in certain electrical field strength. The prediction was further proved by comparing two groups of devices with and without the accelerating layer: ITO/MEH-PPV/SiO2/Al and ITO/MEH-PPV/BCP/Al. The current avalanche observed in current–illumination experiment is a proof of the existence and contribution of secondary electrons.