Quantum dot light-emitting diode with quantum dots inside the hole transporting layers

We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and...

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Main Authors: Leck, Kheng Swee, Divayana, Yoga, Zhao, Dewei, Yang, Xuyong, Abiyasa, Agus Putu, Mutlugun, Evren, Gao, Yuan, Liu, Shuwei, Tan, Swee Tiam, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/99823
http://hdl.handle.net/10220/17230
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-998232020-03-07T14:00:31Z Quantum dot light-emitting diode with quantum dots inside the hole transporting layers Leck, Kheng Swee Divayana, Yoga Zhao, Dewei Yang, Xuyong Abiyasa, Agus Putu Mutlugun, Evren Gao, Yuan Liu, Shuwei Tan, Swee Tiam Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Electrical and electronic engineering We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs. 2013-11-05T03:06:33Z 2019-12-06T20:12:03Z 2013-11-05T03:06:33Z 2019-12-06T20:12:03Z 2013 2013 Journal Article Leck, K. S., Divayana, Y., Zhao, D., Yang, X., Abiyasa, A. P., Mutlugun, E., et al. (2013). Quantum dot light-emitting diode with quantum dots inside the hole transporting layers. ACS Applied materials & interfaces, 5(14), 6535-6540. https://hdl.handle.net/10356/99823 http://hdl.handle.net/10220/17230 10.1021/am400903c en ACS applied materials & interfaces
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Leck, Kheng Swee
Divayana, Yoga
Zhao, Dewei
Yang, Xuyong
Abiyasa, Agus Putu
Mutlugun, Evren
Gao, Yuan
Liu, Shuwei
Tan, Swee Tiam
Sun, Xiaowei
Demir, Hilmi Volkan
Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
description We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Leck, Kheng Swee
Divayana, Yoga
Zhao, Dewei
Yang, Xuyong
Abiyasa, Agus Putu
Mutlugun, Evren
Gao, Yuan
Liu, Shuwei
Tan, Swee Tiam
Sun, Xiaowei
Demir, Hilmi Volkan
format Article
author Leck, Kheng Swee
Divayana, Yoga
Zhao, Dewei
Yang, Xuyong
Abiyasa, Agus Putu
Mutlugun, Evren
Gao, Yuan
Liu, Shuwei
Tan, Swee Tiam
Sun, Xiaowei
Demir, Hilmi Volkan
author_sort Leck, Kheng Swee
title Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
title_short Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
title_full Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
title_fullStr Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
title_full_unstemmed Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
title_sort quantum dot light-emitting diode with quantum dots inside the hole transporting layers
publishDate 2013
url https://hdl.handle.net/10356/99823
http://hdl.handle.net/10220/17230
_version_ 1681043661300695040