Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

• المؤلفون الرئيسيون: Lee, Chun Wei, Dong, Xiaochen, Goh, Seok Hong, Wang, Junling, Wei, Jun, Li, Lain-Jong
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Materials::Nanostructured materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99840; http://hdl.handle.net/10220/7420
• المؤسسة: Nanyang Technological University

The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si−SiO2 interface. We show that the hysteresis in SWNT transistors wi...