Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

• Main Authors: Lee, Chun Wei, Dong, Xiaochen, Goh, Seok Hong, Wang, Junling, Wei, Jun, Li, Lain-Jong
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2011
• 主題: DRNTU::Engineering::Materials::Nanostructured materials
• 在線閱讀: https://hdl.handle.net/10356/99840; http://hdl.handle.net/10220/7420
• 機構: Nanyang Technological University

The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si−SiO2 interface. We show that the hysteresis in SWNT transistors wi...