High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD
Chemical Vapor Deposition
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sg-nus-scholar.10635-1070642015-02-03T18:41:46Z High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD Wang, Y. Gong, H. MATERIALS SCIENCE Chemical Vapor Deposition 6 6 285-288 CVDEF 2014-10-29T08:38:59Z 2014-10-29T08:38:59Z 2000-11 Article Wang, Y.,Gong, H. (2000-11). High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD. Chemical Vapor Deposition 6 (6) : 285-288. ScholarBank@NUS Repository. 09481907 http://scholarbank.nus.edu.sg/handle/10635/107064 NOT_IN_WOS Scopus |
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Chemical Vapor Deposition |
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MATERIALS SCIENCE |
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MATERIALS SCIENCE Wang, Y. Gong, H. |
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Article |
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Wang, Y. Gong, H. |
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Wang, Y. Gong, H. High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD |
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Wang, Y. |
title |
High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD |
title_short |
High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD |
title_full |
High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD |
title_fullStr |
High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD |
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High-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced MOCVD |
title_sort |
high-conductivity p-type transparent copper aluminum oxide film prepared by plasma-enhanced mocvd |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/107064 |
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