Ho, M., Gong, H., Wilk, G., Busch, B., Green, M., Lin, W., . . . SCIENCE, M. (2014). Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition.
استشهاد بنمط شيكاغوHo, M.-Y., et al. Suppressed Crystallization of Hf-based Gate Dielectrics By Controlled Addition of Al2O3 Using Atomic Layer Deposition. 2014.
MLA استشهادHo, M.-Y., et al. Suppressed Crystallization of Hf-based Gate Dielectrics By Controlled Addition of Al2O3 Using Atomic Layer Deposition. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.