Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

10.1063/1.1522826

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Bibliographic Details
Main Authors: Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/107219
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/107219

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