Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

بواسطة Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T.
منشور في 2014

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

بواسطة Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Voyles, P.M., Muller, D.A., Bude, M., Lin, W.H., See, A., Loomans, M.E., Lahiri, S.K., Räisänen, P.I.
منشور في 2014