Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

10.1063/1.1522826

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Bibliographic Details
Main Authors:	Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T.
Other Authors:	MATERIALS SCIENCE
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/107219
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-107219
record_format	dspace
spelling	sg-nus-scholar.10635-1072192023-10-29T21:47:01Z Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T. MATERIALS SCIENCE 10.1063/1.1522826 Applied Physics Letters 81 22 4218-4220 APPLA 2014-10-29T08:41:08Z 2014-10-29T08:41:08Z 2002-11-25 Article Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T. (2002-11-25). Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition. Applied Physics Letters 81 (22) : 4218-4220. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1522826 00036951 http://scholarbank.nus.edu.sg/handle/10635/107219 000179340800040 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1522826
author2	MATERIALS SCIENCE
author_facet	MATERIALS SCIENCE Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T.
format	Article
author	Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T.
spellingShingle	Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T. Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
author_sort	Ho, M.-Y.
title	Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
title_short	Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
title_full	Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
title_fullStr	Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
title_full_unstemmed	Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
title_sort	suppressed crystallization of hf-based gate dielectrics by controlled addition of al2o3 using atomic layer deposition
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/107219
_version_	1781788359075561472

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

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