Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

• Main Authors: Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T.
• Other Authors: MATERIALS SCIENCE
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/107219
• Institution: National University of Singapore

10.1063/1.1522826