Ho, M., Gong, H., Wilk, G., Busch, B., Green, M., Lin, W., . . . SCIENCE, M. (2014). Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition.
Chicago Style CitationHo, M.-Y., et al. Suppressed Crystallization of Hf-based Gate Dielectrics By Controlled Addition of Al2O3 Using Atomic Layer Deposition. 2014.
MLA引文Ho, M.-Y., et al. Suppressed Crystallization of Hf-based Gate Dielectrics By Controlled Addition of Al2O3 Using Atomic Layer Deposition. 2014.
警告：這些引文格式不一定是100％准確.