發送短信 : Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

  _____     _____    __   _      ___              
 /  ___||  |  ___|| | || | ||   / _ \\      ___   
| // __    | ||__   | '--' ||  / //\ \\    /   || 
| \\_\ ||  | ||__   | .--. || |  ___  ||  | [] || 
 \____//   |_____|| |_|| |_|| |_||  |_||   \__ || 
  `---`    `-----`  `-`  `-`  `-`   `-`     -|_|| 
                                             `-`