Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2

Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2

10.1016/j.scriptamat.2012.02.031

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Bibliographic Details
Main Authors: Bao, N.N., Yi, J.B., Fan, H.M., Qin, X.B., Zhang, P., Wang, B.Y., Ding, J., Li, S.
Other Authors: NUS NANOSCIENCE & NANOTECH INITIATIVE
Format: Article
Published: 2014
Subjects:
Diluted magnetic semiconductor
Room-temperature ferromagnetism
TiO 2
Vacancy
Online Access:http://scholarbank.nus.edu.sg/handle/10635/114872
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/114872

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