Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2

• Main Authors: Bao, N.N., Yi, J.B., Fan, H.M., Qin, X.B., Zhang, P., Wang, B.Y., Ding, J., Li, S.
• 其他作者: MATERIALS SCIENCE AND ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Diluted magnetic semiconductor; Room-temperature ferromagnetism; TiO 2; Vacancy
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/114872

10.1016/j.scriptamat.2012.02.031