Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region

Ph.D

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Main Author: SEETOH PEIYUAN, IAN
Other Authors: SINGAPORE-MIT ALLIANCE
Format: Theses and Dissertations
Language:English
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/118239
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-1182392015-01-06T02:07:51Z Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region SEETOH PEIYUAN, IAN SINGAPORE-MIT ALLIANCE CHUA SOO JIN EUGENE FITZGERALD indium, nitride, photoluminescence, MOCVD, 1.55, porous Ph.D DOCTOR OF PHILOSOPHY 2014-12-31T18:01:15Z 2014-12-31T18:01:15Z 2014-06-27 Thesis SEETOH PEIYUAN, IAN (2014-06-27). Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/118239 NOT_IN_WOS en
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
language English
topic indium, nitride, photoluminescence, MOCVD, 1.55, porous
spellingShingle indium, nitride, photoluminescence, MOCVD, 1.55, porous
SEETOH PEIYUAN, IAN
Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region
description Ph.D
author2 SINGAPORE-MIT ALLIANCE
author_facet SINGAPORE-MIT ALLIANCE
SEETOH PEIYUAN, IAN
format Theses and Dissertations
author SEETOH PEIYUAN, IAN
author_sort SEETOH PEIYUAN, IAN
title Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region
title_short Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region
title_full Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region
title_fullStr Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region
title_full_unstemmed Growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region
title_sort growth and luminescence characteristics of indium nitride for optoelectronics applications in the 1.55-micron region
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/118239
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