Characterization of gallium nitride grown on sapphire and GaN substrates
Master's
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sg-nus-scholar.10635-140952015-01-31T11:27:34Z Characterization of gallium nitride grown on sapphire and GaN substrates TAN LAY THENG ELECTRICAL & COMPUTER ENGINEERING CHUA SOO JIN GaN, V/III flux ratio, Si doping concentration, edge threading dislocation, screw threading dislocation, defect Master's MASTER OF ENGINEERING 2010-04-08T10:39:49Z 2010-04-08T10:39:49Z 2004-08-03 Thesis TAN LAY THENG (2004-08-03). Characterization of gallium nitride grown on sapphire and GaN substrates. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/14095 NOT_IN_WOS en |
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National University of Singapore |
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Singapore |
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ScholarBank@NUS |
language |
English |
topic |
GaN, V/III flux ratio, Si doping concentration, edge threading dislocation, screw threading dislocation, defect |
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GaN, V/III flux ratio, Si doping concentration, edge threading dislocation, screw threading dislocation, defect TAN LAY THENG Characterization of gallium nitride grown on sapphire and GaN substrates |
description |
Master's |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING TAN LAY THENG |
format |
Theses and Dissertations |
author |
TAN LAY THENG |
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TAN LAY THENG |
title |
Characterization of gallium nitride grown on sapphire and GaN substrates |
title_short |
Characterization of gallium nitride grown on sapphire and GaN substrates |
title_full |
Characterization of gallium nitride grown on sapphire and GaN substrates |
title_fullStr |
Characterization of gallium nitride grown on sapphire and GaN substrates |
title_full_unstemmed |
Characterization of gallium nitride grown on sapphire and GaN substrates |
title_sort |
characterization of gallium nitride grown on sapphire and gan substrates |
publishDate |
2010 |
url |
http://scholarbank.nus.edu.sg/handle/10635/14095 |
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1681078969168822272 |