Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation

Master's

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Bibliographic Details
Main Author:	CHAN YIN HONG
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	Inverse modeling, doping profile, process simulation, multiple, dimensional,
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/15120
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-15120
record_format	dspace
spelling	sg-nus-scholar.10635-151202024-10-26T03:57:41Z Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation CHAN YIN HONG ELECTRICAL & COMPUTER ENGINEERING CHOR ENG FONG SAMUDRA, GANESH S Inverse modeling, doping profile, process simulation, multiple, dimensional, Master's MASTER OF ENGINEERING 2010-04-08T10:50:14Z 2010-04-08T10:50:14Z 2006-03-05 Thesis CHAN YIN HONG (2006-03-05). Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/15120 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Inverse modeling, doping profile, process simulation, multiple, dimensional,
spellingShingle	Inverse modeling, doping profile, process simulation, multiple, dimensional, CHAN YIN HONG Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation
description	Master's
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING CHAN YIN HONG
format	Theses and Dissertations
author	CHAN YIN HONG
author_sort	CHAN YIN HONG
title	Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation
title_short	Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation
title_full	Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation
title_fullStr	Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation
title_full_unstemmed	Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation
title_sort	inverse modeling for the study of 2d doping profile of submicron transistor using process and device simulation
publishDate	2010
url	http://scholarbank.nus.edu.sg/handle/10635/15120
_version_	1821199691632607232

Inverse modeling for the study of 2D doping profile of submicron transistor using process and device simulation

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