PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE

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Bibliographic Details
Main Author:	LEE YUN
Other Authors:	SINGAPORE-MIT ALLIANCE
Format:	Theses and Dissertations
Published:	2019
Subjects:	Plasma induced damage trap charge interface trapped charge gate leakage plasma charging TDDB ILD reliability C-V measurement electron shading effect
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/153949
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-153949
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spelling	sg-nus-scholar.10635-1539492024-10-26T00:11:09Z PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE LEE YUN SINGAPORE-MIT ALLIANCE CHUA SOO JIN LEE HSU MENG Plasma induced damage trap charge interface trapped charge gate leakage plasma charging TDDB ILD reliability C-V measurement electron shading effect Master's MASTER OF SCIENCE IN ADVANCED MATERIALS FOR MICRO- & NANO- SYSTEMS Dissertation Supervisors 1. Prof. Chua Soo Jin, Deputy Director of SMA, NUS 2. Mr. Lee Hsu Meng, Senior Engineer, Systems on Silicon Manufacturing Company Pte. Ltd. 2019-05-10T04:53:56Z 2019-05-10T04:53:56Z 2010 Thesis LEE YUN (2010). PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/153949 SMA BATCHLOAD 20190422
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Plasma induced damage trap charge interface trapped charge gate leakage plasma charging TDDB ILD reliability C-V measurement electron shading effect
spellingShingle	Plasma induced damage trap charge interface trapped charge gate leakage plasma charging TDDB ILD reliability C-V measurement electron shading effect LEE YUN PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE
description	Master's
author2	SINGAPORE-MIT ALLIANCE
author_facet	SINGAPORE-MIT ALLIANCE LEE YUN
format	Theses and Dissertations
author	LEE YUN
author_sort	LEE YUN
title	PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE
title_short	PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE
title_full	PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE
title_fullStr	PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE
title_full_unstemmed	PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE
title_sort	process improvement in 0.152 cmos for plasma induced damage in gate current performance
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/153949
_version_	1821192774323535872

PROCESS IMPROVEMENT IN 0.152 CMOS FOR PLASMA INDUCED DAMAGE IN GATE CURRENT PERFORMANCE

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