Non-Volatile Complementary Polarizer Spin-Transfer Torque On-Chip Caches: A Device/Circuit/Systems Perspective

• Main Authors: Fong, Xuanyao, Venkatesan, Rangharajan, Raghunathan, Anand, Roy, Kaushik
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
• Subjects: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; Complementary polarizer spin-transfer torque magnetic random access memory (CPSTT-MRAM); spin-transfer torque magnetic random access memory (STT-MRAM); symmetric STT-MRAM write current; true self-reference differential STT-MRAM; MAGNETIC TUNNEL-JUNCTIONS; STT-MRAMS; MAGNETORESISTANCE; SCHEME; RAM
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/156183
• Institution: National University of Singapore

10.1109/TMAG.2014.2326858