APA引文

Seo, Y., Fong, X., Kwon, K., Roy, K., & ENGINEERING, E. A. C. (2019). Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.

Chicago Style Citation

Seo, Yeongkyo, Xuanyao Fong, Kon-Woo Kwon, Kaushik Roy, and ELECTRICAL AND COMPUTER ENGINEERING. Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019.

MLA引文

Seo, Yeongkyo, et al. Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019.

警告:這些引文格式不一定是100%准確.