Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches

• Main Authors: Seo, Yeongkyo, Fong, Xuanyao, Kwon, Kon-Woo, Roy, Kaushik
• Other Authors: DEPT OF ELECTRICAL & COMPUTER ENGG
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
• Subjects: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; Spin electronics; differential memory; magnetic random-access memory; read/write ports; spin-Hall effect; spin-transfer torque; STT-MRAM; ARCHITECTURE
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/156187
• Institution: National University of Singapore

10.1109/LMAG.2015.2422260