Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches

• المؤلفون الرئيسيون: Seo, Yeongkyo, Fong, Xuanyao, Kwon, Kon-Woo, Roy, Kaushik
• مؤلفون آخرون: ELECTRICAL AND COMPUTER ENGINEERING
• التنسيق: مقال
• اللغة: English
• منشور في: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
• الموضوعات: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; Spin electronics; differential memory; magnetic random-access memory; read/write ports; spin-Hall effect; spin-transfer torque; STT-MRAM; ARCHITECTURE
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/156187

10.1109/LMAG.2015.2422260