Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches

Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches

10.1109/LMAG.2015.2422260

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Bibliographic Details
Main Authors:	Seo, Yeongkyo, Fong, Xuanyao, Kwon, Kon-Woo, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Spin electronics differential memory magnetic random-access memory read/write ports spin-Hall effect spin-transfer torque STT-MRAM ARCHITECTURE
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156187
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Institution:	National University of Singapore

Description
Summary:	10.1109/LMAG.2015.2422260