Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches

10.1109/LMAG.2015.2422260

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Bibliographic Details
Main Authors:	Seo, Yeongkyo, Fong, Xuanyao, Kwon, Kon-Woo, Roy, Kaushik
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2019
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Spin electronics differential memory magnetic random-access memory read/write ports spin-Hall effect spin-transfer torque STT-MRAM ARCHITECTURE
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/156187
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-156187
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spelling	sg-nus-scholar.10635-1561872021-10-01T10:33:27Z Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches Seo, Yeongkyo Fong, Xuanyao Kwon, Kon-Woo Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Spin electronics differential memory magnetic random-access memory read/write ports spin-Hall effect spin-transfer torque STT-MRAM ARCHITECTURE 10.1109/LMAG.2015.2422260 IEEE MAGNETICS LETTERS 6 2019-07-03T03:35:44Z 2019-07-03T03:35:44Z 2015-01-01 2019-07-03T03:20:45Z Seo, Yeongkyo, Fong, Xuanyao, Kwon, Kon-Woo, Roy, Kaushik (2015-01-01). Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches. IEEE MAGNETICS LETTERS 6. ScholarBank@NUS Repository. https://doi.org/10.1109/LMAG.2015.2422260 1949-307X 1949-3088 https://scholarbank.nus.edu.sg/handle/10635/156187 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Spin electronics differential memory magnetic random-access memory read/write ports spin-Hall effect spin-transfer torque STT-MRAM ARCHITECTURE
spellingShingle	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Spin electronics differential memory magnetic random-access memory read/write ports spin-Hall effect spin-transfer torque STT-MRAM ARCHITECTURE Seo, Yeongkyo Fong, Xuanyao Kwon, Kon-Woo Roy, Kaushik Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
description	10.1109/LMAG.2015.2422260
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG Seo, Yeongkyo Fong, Xuanyao Kwon, Kon-Woo Roy, Kaushik
author	Seo, Yeongkyo Fong, Xuanyao Kwon, Kon-Woo Roy, Kaushik
author_sort	Seo, Yeongkyo
title	Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
title_short	Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
title_full	Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
title_fullStr	Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
title_full_unstemmed	Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches
title_sort	spin-hall magnetic random-access memory with dual read/write ports for on-chip caches
publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/156187
_version_	1713212665376014336

Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches

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