KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS
Ph.D
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2020
|
| 主題: | |
| 在線閱讀: | https://scholarbank.nus.edu.sg/handle/10635/164204 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | National University of Singapore |
| 語言: | English |
| id |
sg-nus-scholar.10635-164204 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-1642042024-10-24T12:47:51Z KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS HUANG BINJIE DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG) Thong Thiam Leong, John two-dimensional materials, transition metal dichalcogenides, molybdenum disulfide, field-effect transistors, plasma, semiconductor Ph.D DOCTOR OF PHILOSOPHY (NGS) 2020-01-31T18:02:09Z 2020-01-31T18:02:09Z 2019-08-15 Thesis HUANG BINJIE (2019-08-15). KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/164204 en |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| language |
English |
| topic |
two-dimensional materials, transition metal dichalcogenides, molybdenum disulfide, field-effect transistors, plasma, semiconductor |
| spellingShingle |
two-dimensional materials, transition metal dichalcogenides, molybdenum disulfide, field-effect transistors, plasma, semiconductor HUANG BINJIE KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS |
| description |
Ph.D |
| author2 |
DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG) |
| author_facet |
DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG) HUANG BINJIE |
| format |
Theses and Dissertations |
| author |
HUANG BINJIE |
| author_sort |
HUANG BINJIE |
| title |
KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS |
| title_short |
KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS |
| title_full |
KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS |
| title_fullStr |
KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS |
| title_full_unstemmed |
KEY ISSUES IN USING TWO-DIMENSIONAL TRANSITION-METAL DICHALCOGENIDES FOR TRANSISTOR APPLICATIONS |
| title_sort |
key issues in using two-dimensional transition-metal dichalcogenides for transistor applications |
| publishDate |
2020 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/164204 |
| _version_ |
1821209200601071616 |