Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment

10.1039/c5nr00253b

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Bibliographic Details
Main Authors:	Leong, Wei Sun, Li, Yida, Luo, Xin, Nai, Chang Tai, Quek, Su Ying, Thong, John TL
Other Authors:	CENTRE FOR ADVANCED 2D MATERIALS
Format:	Article
Language:	English
Published:	ROYAL SOCIETY OF CHEMISTRY 2020
Subjects:	Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics CONTACT-RESISTANCE LAYER MOS2 DEFECT STATES ENHANCEMENT TRANSITION TRANSPORT DEVICES
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/170918
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-170918
record_format	dspace
spelling	sg-nus-scholar.10635-1709182023-09-20T21:51:01Z Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment Leong, Wei Sun Li, Yida Luo, Xin Nai, Chang Tai Quek, Su Ying Thong, John TL CENTRE FOR ADVANCED 2D MATERIALS DEPT OF CHEMISTRY DEPT OF ELECTRICAL & COMPUTER ENGG DEPT OF PHYSICS Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics CONTACT-RESISTANCE LAYER MOS2 DEFECT STATES ENHANCEMENT TRANSITION TRANSPORT DEVICES 10.1039/c5nr00253b NANOSCALE 7 24 10823-10831 2020-07-07T08:33:53Z 2020-07-07T08:33:53Z 2015-01-01 2020-07-06T08:48:55Z Article Leong, Wei Sun, Li, Yida, Luo, Xin, Nai, Chang Tai, Quek, Su Ying, Thong, John TL (2015-01-01). Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment. NANOSCALE 7 (24) : 10823-10831. ScholarBank@NUS Repository. https://doi.org/10.1039/c5nr00253b 20403364 20403372 https://scholarbank.nus.edu.sg/handle/10635/170918 en ROYAL SOCIETY OF CHEMISTRY Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics CONTACT-RESISTANCE LAYER MOS2 DEFECT STATES ENHANCEMENT TRANSITION TRANSPORT DEVICES
spellingShingle	Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics CONTACT-RESISTANCE LAYER MOS2 DEFECT STATES ENHANCEMENT TRANSITION TRANSPORT DEVICES Leong, Wei Sun Li, Yida Luo, Xin Nai, Chang Tai Quek, Su Ying Thong, John TL Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
description	10.1039/c5nr00253b
author2	CENTRE FOR ADVANCED 2D MATERIALS
author_facet	CENTRE FOR ADVANCED 2D MATERIALS Leong, Wei Sun Li, Yida Luo, Xin Nai, Chang Tai Quek, Su Ying Thong, John TL
format	Article
author	Leong, Wei Sun Li, Yida Luo, Xin Nai, Chang Tai Quek, Su Ying Thong, John TL
author_sort	Leong, Wei Sun
title	Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
title_short	Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
title_full	Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
title_fullStr	Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
title_full_unstemmed	Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
title_sort	tuning the threshold voltage of mos2 field-effect transistors via surface treatment
publisher	ROYAL SOCIETY OF CHEMISTRY
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/170918
_version_	1778169545277571072

Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment

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