Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

10.1063/1.4880240

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Bibliographic Details
Main Authors:	Xia, M, Cheng, Z, Han, J, Zheng, M, Sow, C.-H, Thong, J.T.L, Zhang, S, Li, B
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	2020
Subjects:	Electric conductivity Ion implantation Nanowires Thermoelectricity Zinc oxide Diameter reduction Electrical conductivity Point scattering Room temperature Theoretical simulation Thermoelectric performance Transverse acoustic phonons Zinc oxide (ZnO) Thermal conductivity
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/174656
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-174656
record_format	dspace
spelling	sg-nus-scholar.10635-1746562024-04-25T03:33:46Z Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires Xia, M Cheng, Z Han, J Zheng, M Sow, C.-H Thong, J.T.L Zhang, S Li, B ELECTRICAL AND COMPUTER ENGINEERING PHYSICS Electric conductivity Ion implantation Nanowires Thermoelectricity Zinc oxide Diameter reduction Electrical conductivity Point scattering Room temperature Theoretical simulation Thermoelectric performance Transverse acoustic phonons Zinc oxide (ZnO) Thermal conductivity 10.1063/1.4880240 AIP Advances 4 5 57128 2020-09-08T03:52:32Z 2020-09-08T03:52:32Z 2014 Article Xia, M, Cheng, Z, Han, J, Zheng, M, Sow, C.-H, Thong, J.T.L, Zhang, S, Li, B (2014). Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires. AIP Advances 4 (5) : 57128. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4880240 2158-3226 https://scholarbank.nus.edu.sg/handle/10635/174656 Unpaywall 20200831
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electric conductivity Ion implantation Nanowires Thermoelectricity Zinc oxide Diameter reduction Electrical conductivity Point scattering Room temperature Theoretical simulation Thermoelectric performance Transverse acoustic phonons Zinc oxide (ZnO) Thermal conductivity
spellingShingle	Electric conductivity Ion implantation Nanowires Thermoelectricity Zinc oxide Diameter reduction Electrical conductivity Point scattering Room temperature Theoretical simulation Thermoelectric performance Transverse acoustic phonons Zinc oxide (ZnO) Thermal conductivity Xia, M Cheng, Z Han, J Zheng, M Sow, C.-H Thong, J.T.L Zhang, S Li, B Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
description	10.1063/1.4880240
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Xia, M Cheng, Z Han, J Zheng, M Sow, C.-H Thong, J.T.L Zhang, S Li, B
format	Article
author	Xia, M Cheng, Z Han, J Zheng, M Sow, C.-H Thong, J.T.L Zhang, S Li, B
author_sort	Xia, M
title	Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
title_short	Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
title_full	Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
title_fullStr	Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
title_full_unstemmed	Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
title_sort	gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of zno nanowires
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/174656
_version_	1800914265992855552

Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

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