Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators

• Main Authors: Chou, B.-H, Huang, Z.-Q, Hsu, C.-H, Chuang, F.-C, Liu, Y.-T, Lin, H, Bansil, A
• Other Authors: DEPT OF PHYSICS
• Format: Article
• Published: Institute of Physics Publishing 2020
• Subjects: Calculations; Electric insulators; Electronic structure; Energy gap; Hydrogenation; Iodine; Metallic films; Quantum Hall effect; Spin Hall effect; Tin; Ultrathin films; First-principles calculation; Quantum Spin hall effect; TiN thin films; Topological insulators; Topological phase; Thin films
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/175300
• Institution: National University of Singapore

10.1088/1367-2630/16/11/115008