Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films
10.1002/advs.201700912
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2020
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sg-nus-scholar.10635-1760442023-11-01T07:48:55Z Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films Wang, Q Li, J Besbas, J Hsu, C.-H Cai, K Yang, L Cheng, S Wu, Y Zhang, W Wang, K Chang, T.-R Lin, H Chang, H Yang, H DEPT OF ELECTRICAL & COMPUTER ENGG DEPT OF PHYSICS Calculations Crystal symmetry Metalloids Molybdenum compounds Spin dynamics Spin polarization Tellurium compounds Thin films Ab initio calculations Electron hole recombination rate Kerr rotation Large current density Non-centrosymmetry Out-of-plane magnetic fields Spin polarized state Spin relaxation time Tungsten compounds 10.1002/advs.201700912 Advanced Science 5 6 1700912 2020-09-14T07:51:22Z 2020-09-14T07:51:22Z 2018 Article Wang, Q, Li, J, Besbas, J, Hsu, C.-H, Cai, K, Yang, L, Cheng, S, Wu, Y, Zhang, W, Wang, K, Chang, T.-R, Lin, H, Chang, H, Yang, H (2018). Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films. Advanced Science 5 (6) : 1700912. ScholarBank@NUS Repository. https://doi.org/10.1002/advs.201700912 2198-3844 https://scholarbank.nus.edu.sg/handle/10635/176044 Unpaywall 20200831 |
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Singapore Singapore |
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| topic |
Calculations Crystal symmetry Metalloids Molybdenum compounds Spin dynamics Spin polarization Tellurium compounds Thin films Ab initio calculations Electron hole recombination rate Kerr rotation Large current density Non-centrosymmetry Out-of-plane magnetic fields Spin polarized state Spin relaxation time Tungsten compounds |
| spellingShingle |
Calculations Crystal symmetry Metalloids Molybdenum compounds Spin dynamics Spin polarization Tellurium compounds Thin films Ab initio calculations Electron hole recombination rate Kerr rotation Large current density Non-centrosymmetry Out-of-plane magnetic fields Spin polarized state Spin relaxation time Tungsten compounds Wang, Q Li, J Besbas, J Hsu, C.-H Cai, K Yang, L Cheng, S Wu, Y Zhang, W Wang, K Chang, T.-R Lin, H Chang, H Yang, H Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films |
| description |
10.1002/advs.201700912 |
| author2 |
DEPT OF ELECTRICAL & COMPUTER ENGG |
| author_facet |
DEPT OF ELECTRICAL & COMPUTER ENGG Wang, Q Li, J Besbas, J Hsu, C.-H Cai, K Yang, L Cheng, S Wu, Y Zhang, W Wang, K Chang, T.-R Lin, H Chang, H Yang, H |
| format |
Article |
| author |
Wang, Q Li, J Besbas, J Hsu, C.-H Cai, K Yang, L Cheng, S Wu, Y Zhang, W Wang, K Chang, T.-R Lin, H Chang, H Yang, H |
| author_sort |
Wang, Q |
| title |
Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films |
| title_short |
Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films |
| title_full |
Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films |
| title_fullStr |
Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films |
| title_full_unstemmed |
Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films |
| title_sort |
room-temperature nanoseconds spin relaxation in wte2 and mote2 thin films |
| publishDate |
2020 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/176044 |
| _version_ |
1781792224263012352 |