Impact of deposition parameters on the material quality of SPC poly-Si thin films using high-rate PECVD of a-Si:H

Impact of deposition parameters on the material quality of SPC poly-Si thin films using high-rate PECVD of a-Si:H

10.1051/epjpv/2015004

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Bibliographic Details
Main Authors: Kumar, A, Widenborg, P.I, Dalapati, G.K, Subramanian, G.S, Aberle, A.G
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2020
Subjects:
Deposition rates
Flow of gases
Metallic films
Polycrystalline materials
Polysilicon
Silicon wafers
Substrates
Crystal qualities
Deposition Parameters
Glass substrates
High deposition rates
Material quality
Poly-Si thin film
Single-crystalline
UV-VIS-NIR spectrophotometers
Thin films
Online Access:https://scholarbank.nus.edu.sg/handle/10635/176153
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/176153

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