Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds

10.1088/1367-2630/13/8/085017

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Bibliographic Details
Main Authors:	Wang, Y.J, Lin, H, Das, T, Hasan, M.Z, Bansil, A
Other Authors:	CENTRE FOR ADVANCED 2D MATERIALS
Format:	Article
Published:	2020
Subjects:	Atomic numbers Band inversion Brillouin zones Chalcogenide compound Cu-based First-principles calculation Inversion strength Naturally occurring Single point Tetragonal structure Three-dimensional (3D) Atoms Calculations Chalcogenides Electric insulators Positive ions Three dimensional Phase change memory
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/180987
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1809872023-08-30T22:27:56Z Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds Wang, Y.J Lin, H Das, T Hasan, M.Z Bansil, A CENTRE FOR ADVANCED 2D MATERIALS DEPT OF PHYSICS Atomic numbers Band inversion Brillouin zones Chalcogenide compound Cu-based First-principles calculation Inversion strength Naturally occurring Single point Tetragonal structure Three-dimensional (3D) Atoms Calculations Chalcogenides Electric insulators Positive ions Three dimensional Phase change memory 10.1088/1367-2630/13/8/085017 New Journal of Physics 13 85017 2020-10-27T06:49:10Z 2020-10-27T06:49:10Z 2010 Article Wang, Y.J, Lin, H, Das, T, Hasan, M.Z, Bansil, A (2010). Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds. New Journal of Physics 13 : 85017. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/13/8/085017 1367-2630 https://scholarbank.nus.edu.sg/handle/10635/180987 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Atomic numbers Band inversion Brillouin zones Chalcogenide compound Cu-based First-principles calculation Inversion strength Naturally occurring Single point Tetragonal structure Three-dimensional (3D) Atoms Calculations Chalcogenides Electric insulators Positive ions Three dimensional Phase change memory
spellingShingle	Atomic numbers Band inversion Brillouin zones Chalcogenide compound Cu-based First-principles calculation Inversion strength Naturally occurring Single point Tetragonal structure Three-dimensional (3D) Atoms Calculations Chalcogenides Electric insulators Positive ions Three dimensional Phase change memory Wang, Y.J Lin, H Das, T Hasan, M.Z Bansil, A Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
description	10.1088/1367-2630/13/8/085017
author2	CENTRE FOR ADVANCED 2D MATERIALS
author_facet	CENTRE FOR ADVANCED 2D MATERIALS Wang, Y.J Lin, H Das, T Hasan, M.Z Bansil, A
format	Article
author	Wang, Y.J Lin, H Das, T Hasan, M.Z Bansil, A
author_sort	Wang, Y.J
title	Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
title_short	Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
title_full	Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
title_fullStr	Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
title_full_unstemmed	Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
title_sort	topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/180987
_version_	1779152734694408192

Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds

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